Fabricant | No de pièce | Fiches technique | Description |
International Rectifier |
IRHG6110
|
195Kb / 14P |
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
|
Intersil Corporation |
JANSR2N7410
|
45Kb / 8P |
3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET
|
JANSR2N7272
|
39Kb / 7P |
8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET
|
JANSR2N7399
|
44Kb / 8P |
11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET
|
JANSR2N7405
|
44Kb / 8P |
25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
|
JANSR2N7292
|
38Kb / 7P |
25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
|
JANSR2N7395
|
45Kb / 8P |
8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET
|
International Rectifier |
IRHY7G30CMSE
|
110Kb / 8P |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard??HEXFET TECHNOLOGY
|
IRHN7250
|
1Mb / 13P |
Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology
2022-05-16 |
Intersil Corporation |
JANSR2N7411
|
45Kb / 8P |
2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET
|